ALLIANCE MEMORY: 4Mb AND 16Mb 3V MULTIPLE I/O SERIAL NOR FLASH MEMORY

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The News: Alliance Memory announces that is has expanded its offering of 3V multiple input/output serial NOR flash memory products with new 4Mb and 16Mb devices in the SOP8 Narrow Body (150mils) package. The 4Mb AS25F304MD-10S1IN and 16Mb AS25F316MQ-10S1IN combine fast read performance up to 104MHz with fast program and erase times down to 1.1ms and 2.6ms, respectively.

Part Numbers: AS25F304MD-10S1IN, AS25F316MQ-10S1IN

Key Benefits:

  • Enhanced performance with fast read, program, and erase times
  • Operate in single, dual, and quad (AS25F316MQ-10S1IN) SPI modes
  • Reliable, long-term performance with 100,000 program/erase cycles and 20-year data retention
  • Uniform 4KB or 32KB or 64KB erase
  • Program/erase suspend and resume
  • 8/16/32/64 byte wrap-around burst read mode (AS25F316MQ-10S1IN)
  • Advanced security features
    • Block protection
    • 128-bit unique ID for each device
    • Discoverable parameters (SFDP) register
    • 4K-bit secured OTP

Device Specification Table:

Part numberAS25F304MD-10S1INAS25F316MQ-10S1IN
Density4Mb16Mb
Bus widthSerial Multi IO (x1/x2)Serial Multi IO (x1/x2/x4)
VCC2.7V to 3.V        
Frequency104MHz        
Active read current max.4.4mA3.7mA
Program/erase current max.1.4mA1.3mA
Program time typ.1.1ms        
Sector erase time typ.2.6ms5.1ms
Standby current typ. 8µA        
Temperature range-40°C to +85°C        
PackageSOP8 Narrow Body (150mils)        

Target Applications:

  • Hard drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, digital cameras, Bluetooth® devices, handheld GPS units, smart meters, and more

The Context: With their enhanced performance — including fast read performance up to 104MHz; fast program and erase times down to 1.1ms and 2.6ms, respectively; maximum erase/program currents down to 1.3mA; and maximum read currents down to 3.7mA at 104MHz — Alliance Memory’s new 4Mb and 16Mb 3V multiple input/output serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, and IoT markets. The 4Mb AS25F304MD-10S1IN offers support for single and dual SPI operation, while the 16Mb AS25F316MQ-10S1IN adds support for the quad SPI mode. Both devices provide reliable, long-term performance with 100,000 program/erase cycles and 20-year data retention.

The flash memory products support uniform 4KB or 32KB or 64KB erase and feature program/erase suspend and resume. The AS25F316MQ-10S1IN also offers an 8/16/32/64 byte wrap-around burst read mode. Advanced security features include block protection, 128-bit unique ID for each device, a discoverable parameters (SFDP) register, and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing.

Availability: Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 8 to 12 weeks.

Link to product datasheets and Buy Now information: AS25F304MD-10S1IN and AS25F316MQ-10S1IN